CURRENCY:USD

All Products

ZXMP3A16DN8TA

MOSFET 2P-CH 30V 4.2A 8-SOIC


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXMP3A16DN8TA
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 565
  • Description: MOSFET 2P-CH 30V 4.2A 8-SOIC (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to XINJIADA.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Power - Max 1.8W
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 4.2A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds 1022pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.2A
Gate Charge (Qg) (Max) @ Vgs 29.6nC @ 10V
Rise Time 6.5ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 21.4 ns
Turn-Off Delay Time 37.1 ns
Continuous Drain Current (ID) 5.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.5mm
Length 5mm
Width 4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 45mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation 2.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -5.5A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Turn On Delay Time 3.8 ns
See Relate Datesheet
How can we help you?