All Products

View All >>

VMMK-1218-BLKG

BROADCOM LIMITED VMMK-1218-BLKG RF FET Transistor, Vixen Low Noise, 5 V, 100 mA, 300 mW, 500 MHz, 18 GHz, SMD

Manufacturer: Broadcom Limited
Origchip NO: 107-VMMK-1218-BLKG
Package: 0402 (1005 Metric)
Datasheet: PDF
Stock: 974
Description: BROADCOM LIMITED VMMK-1218-BLKG RF FET Transistor, Vixen Low Noise, 5 V, 100 mA, 300 mW, 500 MHz, 18 GHz, SMD (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to XINJIADA.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Mount	Surface Mount
Package / Case	0402 (1005 Metric)
Number of Pins	3
Transistor Element Material	GALLIUM ARSENIDE
Packaging	Strip
Published	2008
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	2 (1 Year)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Max Operating Temperature	150°C
Subcategory	FET RF Small Signal
Max Power Dissipation	300mW
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
Current Rating	100mA
Frequency	10GHz
Time@Peak Reflow Temperature-Max (s)	40
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Case Connection	SOURCE
Current - Test	20mA
Transistor Application	AMPLIFIER
Drain to Source Voltage (Vdss)	5V
Polarity/Channel Type	N-CHANNEL
Transistor Type	E-pHEMT
Continuous Drain Current (ID)	100mA
Gate to Source Voltage (Vgs)	1V
Gain	9dB
Drain Current-Max (Abs) (ID)	0.1A
DS Breakdown Voltage-Min	5V
Power - Output	12dBm
FET Technology	HIGH ELECTRON MOBILITY
Noise Figure	0.81dB
Voltage - Test	3V
Height	250μm
Length	1mm
Width	500μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free