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SUD23N06-31-GE3

Mosfet; Power; N-ch; Vdss 60V; Rds(on) 0.025 Ohm; Id 25A; TO-252; Pd 50W; Vgs +/-20V; -55

Manufacturer: Vishay Siliconix
Origchip NO: 880-SUD23N06-31-GE3
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet: PDF
Stock: 438
Description: Mosfet; Power; N-ch; Vdss 60V; Rds(on) 0.025 Ohm; Id 25A; TO-252; Pd 50W; Vgs +/-20V; -55 (Kg)

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Details

Tags

Parameters
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	5.7W Ta 31.25W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5.7W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	31m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	670pF @ 25V
Current - Continuous Drain (Id) @ 25°C	21.4A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	250ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	68 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	9.1A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	50A
Avalanche Energy Rating (Eas)	20 mJ
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	31mOhm