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SUD23N06-31-GE3

Mosfet; Power; N-ch; Vdss 60V; Rds(on) 0.025 Ohm; Id 25A; TO-252; Pd 50W; Vgs +/-20V; -55


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SUD23N06-31-GE3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 438
  • Description: Mosfet; Power; N-ch; Vdss 60V; Rds(on) 0.025 Ohm; Id 25A; TO-252; Pd 50W; Vgs +/-20V; -55 (Kg)

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Details

Tags

Parameters
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5.7W Ta 31.25W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5.7W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 31m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 670pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21.4A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 250ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 68 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 9.1A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 50A
Avalanche Energy Rating (Eas) 20 mJ
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 31mOhm
See Relate Datesheet
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