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STGP3NB60F

STGP3NB60F datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi

Manufacturer: STMicroelectronics
Origchip NO: 761-STGP3NB60F
Package: TO-220-3
Datasheet: PDF
Stock: 926
Description: STGP3NB60F datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	68W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	3A
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGP3
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	25W
Input Type	Standard
Power - Max	68W
Transistor Application	MOTOR CONTROL
Rise Time	60ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.4V
Max Collector Current	6A
Reverse Recovery Time	45 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.9V
Turn On Time	16.5 ns
Test Condition	480V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 3A
Turn Off Time-Nom (toff)	535 ns
Gate Charge	16nC
Current - Collector Pulsed (Icm)	24A
Td (on/off) @ 25°C	12.5ns/105ns
Switching Energy	125μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead