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SISA24DN-T1-GE3

MOSFET N-CH 25V 60A POWERPAK1212

Manufacturer: Vishay Siliconix
Origchip NO: 880-SISA24DN-T1-GE3
Package: PowerPAK® 1212-8
Datasheet: PDF
Stock: 860
Description: MOSFET N-CH 25V 60A POWERPAK1212 (Kg)

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Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET® Gen IV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Channels	1
Power Dissipation-Max	52W Tc
Power Dissipation	3.7W
Turn On Delay Time	12 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.4m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2650pF @ 10V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	26nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	+20V, -16V
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	38.3A
Drain to Source Breakdown Voltage	25V
Max Junction Temperature (Tj)	150°C
Height	1.17mm
RoHS Status	ROHS3 Compliant