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SIS892ADN-T1-GE3

MOSFET N-CH 100V 28A PPAK 1212

Manufacturer: Vishay Siliconix
Origchip NO: 880-SIS892ADN-T1-GE3
Package: PowerPAK® 1212-8
Datasheet: PDF
Stock: 253
Description: MOSFET N-CH 100V 28A PPAK 1212 (Kg)

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Details

Tags

Parameters
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	33MOhm
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
JESD-30 Code	S-PDSO-C5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.7W Ta 52W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.7W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	33m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 50V
Current - Continuous Drain (Id) @ 25°C	28A Tc
Gate Charge (Qg) (Max) @ Vgs	19.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	7.4A
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	40A
Avalanche Energy Rating (Eas)	5 mJ
Max Junction Temperature (Tj)	150°C
Height	1.12mm
Length	3.4mm
Width	3.4mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free