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SIR424DP-T1-GE3

MOSFET 20V 5.5mohm @ 10V

Manufacturer: Vishay Siliconix
Origchip NO: 880-SIR424DP-T1-GE3
Package: PowerPAK® SO-8
Datasheet: PDF
Stock: 167
Description: MOSFET 20V 5.5mohm @ 10V (Kg)

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Details

Tags

Parameters
Number of Terminations	5
ECCN Code	EAR99
Resistance	7.4MOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	R-PDSO-C5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	4.8W Ta 41.7W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	4.8W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1250pF @ 10V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Factory Lead Time	14 Weeks
Fall Time (Typ)	10 ns
Mount	Surface Mount
Turn-Off Delay Time	23 ns
Mounting Type	Surface Mount
Continuous Drain Current (ID)	30A
Threshold Voltage	2.5V
Package / Case	PowerPAK® SO-8
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	23.4A
Number of Pins	8
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	70A
Weight	506.605978mg
Height	1.04mm
Length	4.9mm
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Width	5.89mm
Radiation Hardening	No
Packaging	Tape & Reel (TR)
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Published	2013
Lead Free	Lead Free
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)