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SIA413DJ-T1-GE3

MOSFET 12V 12A 19W 29mohm @ 4.5V

Manufacturer: Vishay Siliconix
Origchip NO: 880-SIA413DJ-T1-GE3
Package: PowerPAK® SC-70-6
Datasheet: PDF
Stock: 862
Description: MOSFET 12V 12A 19W 29mohm @ 4.5V (Kg)

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Details

Tags

Parameters
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	29mOhm
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	6
JESD-30 Code	S-XDSO-N4
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.5W Ta 19W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.5W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	29m Ω @ 6.7A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 10V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	57nC @ 8V
Rise Time	40ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	-12A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-12V
Pulsed Drain Current-Max (IDM)	40A
Nominal Vgs	-1 V
Height	750μm
Length	2.05mm
Width	2.05mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free