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SI7421DN-T1-GE3

MOSFET 30V 9.8A 3.6W 25mohm @ 10V

Manufacturer: Vishay Siliconix
Origchip NO: 880-SI7421DN-T1-GE3
Package: PowerPAK® 1212-8
Datasheet: PDF
Stock: 263
Description: MOSFET 30V 9.8A 3.6W 25mohm @ 10V (Kg)

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Details

Tags

Parameters
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	S-XDSO-C5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 9.8A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	6.4A Ta
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Rise Time	13ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	42 ns
Turn-Off Delay Time	57 ns
Continuous Drain Current (ID)	-9.8A
Threshold Voltage	-3V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6.4A
Drain-source On Resistance-Max	0.025Ohm
Drain to Source Breakdown Voltage	-30V
Pulsed Drain Current-Max (IDM)	30A
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant