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SI4866BDY-T1-E3

MOSFET 12V 21.5A 4.45W

Manufacturer: Vishay Siliconix
Origchip NO: 880-SI4866BDY-T1-E3
Package: 8-SOIC (0.154, 3.90mm Width)
Datasheet: PDF
Stock: 554
Description: MOSFET 12V 21.5A 4.45W (Kg)

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Details

Tags

Parameters
Factory Lead Time	15 Weeks
RoHS Status	ROHS3 Compliant
Mount	Surface Mount
Lead Free	Lead Free
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	186.993455mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	5.3MOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
Pin Count	8
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	4.45W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.3m Ω @ 12A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5020pF @ 6V
Current - Continuous Drain (Id) @ 25°C	21.5A Tc
Gate Charge (Qg) (Max) @ Vgs	80nC @ 4.5V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	57 ns
Continuous Drain Current (ID)	16.1A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	12V
Pulsed Drain Current-Max (IDM)	50A
Avalanche Energy Rating (Eas)	20 mJ
Max Junction Temperature (Tj)	150°C
Height	1.75mm
Length	5mm
Width	4mm
Radiation Hardening	No