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SI4464DY-T1-E3

Mosfet; Power; N-ch; Vdss 200V; Rds(on) 0.195 Ohm; Id 1.7A; SO-8; Pd 1.5W; Vgs +/-20V

Manufacturer: Vishay Siliconix
Origchip NO: 880-SI4464DY-T1-E3
Package: 8-SOIC (0.154, 3.90mm Width)
Datasheet: PDF
Stock: 662
Description: Mosfet; Power; N-ch; Vdss 200V; Rds(on) 0.195 Ohm; Id 1.7A; SO-8; Pd 1.5W; Vgs +/-20V (Kg)

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Details

Tags

Parameters
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	186.993455mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	240mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	240m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	1.7A Ta
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	1.7A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Nominal Vgs	2 V
Height	1.55mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free