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SI1967DH-T1-GE3

MOSFET 2P-CH 20V 1.3A SC70-6

Manufacturer: Vishay Siliconix
Origchip NO: 880-SI1967DH-T1-GE3
Package: 6-TSSOP, SC-88, SOT-363
Datasheet: PDF
Stock: 792
Description: MOSFET 2P-CH 20V 1.3A SC70-6 (Kg)

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Details

Tags

Parameters
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	28.009329mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	490MOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	1.25W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
Base Part Number	SI1967
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	740mW
Turn On Delay Time	2 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	490m Ω @ 910mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	110pF @ 10V
Current - Continuous Drain (Id) @ 25°C	1.3A
Gate Charge (Qg) (Max) @ Vgs	4nC @ 8V
Rise Time	27ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	-1A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	1A
Drain to Source Breakdown Voltage	-20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1.1mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free