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SI1302DL-T1-GE3

MOSFET N-CH 30V 600MA SC-70-3

Manufacturer: Vishay Siliconix
Origchip NO: 880-SI1302DL-T1-GE3
Package: SC-70, SOT-323
Datasheet: PDF
Stock: 915
Description: MOSFET N-CH 30V 600MA SC-70-3 (Kg)

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Details

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Parameters
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	280mW Ta
Factory Lead Time	14 Weeks
Element Configuration	Single
Mount	Surface Mount
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	5 ns
Mounting Type	Surface Mount
FET Type	N-Channel
Package / Case	SC-70, SOT-323
Rds On (Max) @ Id, Vgs	480m Ω @ 600mA, 10V
Number of Pins	3
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	600mA Ta
Weight	6.208546mg
Gate Charge (Qg) (Max) @ Vgs	1.4nC @ 10V
Rise Time	8ns
Transistor Element Material	SILICON
Drain to Source Voltage (Vdss)	30V
Operating Temperature	-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Packaging	Tape & Reel (TR)
Fall Time (Typ)	7 ns
Published	2016
Turn-Off Delay Time	8 ns
Continuous Drain Current (ID)	600mA
Series	TrenchFET®
JESD-609 Code	e3
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.6A
Drain-source On Resistance-Max	0.48Ohm
Pbfree Code	yes
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL