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SI1062X-T1-GE3

MOSFET N-CH 20V SC-89

Manufacturer: Vishay Siliconix
Origchip NO: 880-SI1062X-T1-GE3
Package: SC-89, SOT-490
Datasheet: PDF
Stock: 296
Description: MOSFET N-CH 20V SC-89 (Kg)

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Details

Tags

Parameters
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	220mW
Turn On Delay Time	2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	420m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	43pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	2.7nC @ 8V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	530mA
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-89, SOT-490
Number of Pins	3
Weight	29.993795mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	420mOhm
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	220mW Ta