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RN1910FE,LF(CT

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

Manufacturer: Toshiba Semiconductor and Storage
Origchip NO: 830-RN1910FE,LF(CT
Package: SOT-563, SOT-666
Datasheet: -
Stock: 351
Description: Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor (Kg)

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Details

Tags

Parameters
Continuous Collector Current	100mA
RoHS Status	RoHS Compliant
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	ES6
Weight	3.005049mg
Packaging	Cut Tape (CT)
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	100mW
Polarity	NPN
Power - Max	100mW
Transistor Type	2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
Emitter Base Voltage (VEBO)	5V
hFE Min	120
Resistor - Base (R1)	4.7kOhms