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RN1904,LF(CT

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

Manufacturer: Toshiba Semiconductor and Storage
Origchip NO: 830-RN1904,LF(CT
Package: 6-TSSOP, SC-88, SOT-363
Datasheet: PDF
Stock: 960
Description: Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor (Kg)

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Details

Tags

Parameters
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	US6
Weight	6.010099mg
Packaging	Tape & Reel (TR)
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	200mW
Polarity	NPN
Power - Max	200mW
Transistor Type	2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
Emitter Base Voltage (VEBO)	10V
hFE Min	80
Resistor - Base (R1)	47kOhms
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	47kOhms
RoHS Status	RoHS Compliant