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QSB363

QSB363 Series 30 V 940 nm Subminiature Plastic Silicon Infrared Phototransistor


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-QSB363
  • Package: Axial
  • Datasheet: PDF
  • Stock: 467
  • Description: QSB363 Series 30 V 940 nm Subminiature Plastic Silicon Infrared Phototransistor (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 10 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Axial
Number of Pins 2
Weight 90mg
Shape ROUND
Operating Temperature -40°C~85°C TA
Packaging Bulk
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated 30V
Additional Feature DAY LIGHT FILTER
Subcategory Photo Transistors
Voltage - Rated DC 30V
Max Power Dissipation 75mW
Orientation Top View
Number of Functions 1
Current Rating 700mA
Operating Supply Voltage 5V
Number of Elements 1
Polarity NPN
Configuration SINGLE
Power Dissipation 75mW
Viewing Angle 24°
Output Power 75mW
Optoelectronic Device Type PHOTO TRANSISTOR
Lens Style Domed
Rise Time 15μs
Fall Time (Typ) 15 μs
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1.5mA
Wavelength - Peak 940 nm
Collector Emitter Breakdown Voltage 30V
Lens Color Black, Clear
Power Consumption 75mW
Collector Emitter Saturation Voltage 400mV
Max Breakdown Voltage 30V
Dark Current 100nA
Infrared Range YES
Light Current-Nom 1.5mA
Height 3mm
Length 2.7mm
Width 2.2mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet
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