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QSB363

QSB363 Series 30 V 940 nm Subminiature Plastic Silicon Infrared Phototransistor

Manufacturer: ON Semiconductor
Origchip NO: 598-QSB363
Package: Axial
Datasheet: PDF
Stock: 467
Description: QSB363 Series 30 V 940 nm Subminiature Plastic Silicon Infrared Phototransistor (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time	13 Weeks
Lifecycle Status	ACTIVE (Last Updated: 10 hours ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	Axial
Number of Pins	2
Weight	90mg
Shape	ROUND
Operating Temperature	-40°C~85°C TA
Packaging	Bulk
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Voltage - Rated	30V
Additional Feature	DAY LIGHT FILTER
Subcategory	Photo Transistors
Voltage - Rated DC	30V
Max Power Dissipation	75mW
Orientation	Top View
Number of Functions	1
Current Rating	700mA
Operating Supply Voltage	5V
Number of Elements	1
Polarity	NPN
Configuration	SINGLE
Power Dissipation	75mW
Viewing Angle	24°
Output Power	75mW
Optoelectronic Device Type	PHOTO TRANSISTOR
Lens Style	Domed
Rise Time	15μs
Fall Time (Typ)	15 μs
Collector Emitter Voltage (VCEO)	30V
Max Collector Current	1.5mA
Wavelength - Peak	940 nm
Collector Emitter Breakdown Voltage	30V
Lens Color	Black, Clear
Power Consumption	75mW
Collector Emitter Saturation Voltage	400mV
Max Breakdown Voltage	30V
Dark Current	100nA
Infrared Range	YES
Light Current-Nom	1.5mA
Height	3mm
Length	2.7mm
Width	2.2mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free