All Products

View All >>

PMDT290UNE,115

MOSFET 2N-CH 20V 0.8A SOT666

Manufacturer: Nexperia USA Inc.
Origchip NO: 554-PMDT290UNE,115
Package: SOT-563, SOT-666
Datasheet: PDF
Stock: 743
Description: MOSFET 2N-CH 20V 0.8A SOT666 (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to XINJIADA.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Turn-Off Delay Time	86 ns
Continuous Drain Current (ID)	800mA
Gate to Source Voltage (Vgs)	8V
Max Dual Supply Voltage	20V
Drain Current-Max (Abs) (ID)	0.8A
Drain-source On Resistance-Max	0.38Ohm
Factory Lead Time	4 Weeks
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Mounting Type	Surface Mount
FET Feature	Logic Level Gate
Radiation Hardening	No
Package / Case	SOT-563, SOT-666
RoHS Status	ROHS3 Compliant
Surface Mount	YES
Lead Free	Lead Free
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Finish	Tin (Sn)
Max Power Dissipation	500mW
Terminal Form	FLAT
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	390mW
Turn On Delay Time	6 ns
Power - Max	500mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	380m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	83pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	0.68nC @ 4.5V
Rise Time	4ns
Fall Time (Typ)	31 ns