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PBSS4160PANPSX

PBSS4160PANPS - 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

Manufacturer: Nexperia USA Inc.
Origchip NO: 554-PBSS4160PANPSX
Package: 6-UDFN Exposed Pad
Datasheet: PDF
Stock: 726
Description: PBSS4160PANPS - 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor (Kg)

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Details

Tags

Parameters
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	Automotive, AEC-Q101
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Max Power Dissipation	370mW
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	AEC-Q101; IEC-60134
JESD-30 Code	S-PDSO-N6
Number of Elements	2
Polarity	NPN, PNP
Configuration	SEPARATE, 2 ELEMENTS
Case Connection	COLLECTOR
Power - Max	370mW
Transistor Application	SWITCHING
Transistor Type	NPN, PNP
Collector Emitter Voltage (VCEO)	120mV
Max Collector Current	1A
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 500mA 2V / 120 @ 500mA 2V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	120mV @ 50mA, 500mA / 340mV @ 100mA, 1A
Collector Emitter Breakdown Voltage	60V
Transition Frequency	175MHz
Max Breakdown Voltage	60V
Frequency - Transition	175MHz 125MHz
VCEsat-Max	0.24 V
RoHS Status	ROHS3 Compliant