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NTHD4508NT1G

NTHD4508NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTHD4508NT1G
  • Package: 8-SMD, Flat Lead
  • Datasheet: PDF
  • Stock: 577
  • Description: NTHD4508NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 11 hours ago)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Max Power Dissipation 2.1W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating 3.1A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTHD4508N
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.13W
Turn On Delay Time 5 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 3.1A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3A
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Rise Time 15ns
Fall Time (Typ) 15 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 4.1A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.075Ohm
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 10A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.1mm
Length 3.1mm
Width 1.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet
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