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MMBTA06WT1G

MMBTA06WT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi

Manufacturer: ON Semiconductor
Origchip NO: 598-MMBTA06WT1G
Package: SC-70, SOT-323
Datasheet: PDF
Stock: 309
Description: MMBTA06WT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Surface Mount	YES
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	80V
Max Power Dissipation	150mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	500mA
Frequency	100MHz
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	MMBTA06
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	150mW
Transistor Application	AMPLIFIER
Gain Bandwidth Product	100MHz
Polarity/Channel Type	NPN
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	80V
Max Collector Current	500mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA 1V
Current - Collector Cutoff (Max)	100nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage	80V
Transition Frequency	100MHz
Collector Emitter Saturation Voltage	250mV
Max Breakdown Voltage	80V
Collector Base Voltage (VCBO)	80V
Emitter Base Voltage (VEBO)	4V
hFE Min	100
Height	6.35mm
Length	6.35mm
Width	6.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free