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MMBT5550LT1G

MMBT5550LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi

Manufacturer: ON Semiconductor
Origchip NO: 598-MMBT5550LT1G
Package: TO-236-3, SC-59, SOT-23-3
Datasheet: PDF
Stock: 964
Description: MMBT5550LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1998
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Type	General Purpose
Voltage - Rated DC	140V
Max Power Dissipation	225mW
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	600mA
Base Part Number	MMBT5550
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	225mW
Transistor Application	SWITCHING
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	140V
Max Collector Current	600mA
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA 5V
Current - Collector Cutoff (Max)	100nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage	140V
Collector Emitter Saturation Voltage	150mV
Max Breakdown Voltage	140V
Collector Base Voltage (VCBO)	160V
Emitter Base Voltage (VEBO)	6V
hFE Min	60
VCEsat-Max	0.25 V
Height	1.01mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free