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IXXH30N60C3D1

IGBT Transistors XPT 600V IGBT 30A


  • Manufacturer: IXYS
  • Origchip NO: 401-IXXH30N60C3D1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 861
  • Description: IGBT Transistors XPT 600V IGBT 30A (Kg)

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The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2015
Series GenX3™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 270W
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 270W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.3V
Max Collector Current 60A
Reverse Recovery Time 25 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 57 ns
Test Condition 400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 24A
Turn Off Time-Nom (toff) 166 ns
IGBT Type PT
Gate Charge 37nC
Current - Collector Pulsed (Icm) 110A
Td (on/off) @ 25°C 23ns/77ns
Switching Energy 500μJ (on), 270μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
RoHS Status ROHS3 Compliant
See Relate Datesheet
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