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IRG4PC30KDPBF

IRG4PC30KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-IRG4PC30KDPBF
Package: TO-247-3
Datasheet: PDF
Stock: 658
Description: IRG4PC30KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2000
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	100W
Current Rating	28A
Number of Elements	1
Element Configuration	Single
Power Dissipation	100W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	60 ns
Transistor Application	MOTOR CONTROL
Rise Time	42ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	160 ns
Collector Emitter Voltage (VCEO)	2.7V
Max Collector Current	28A
Reverse Recovery Time	42 ns
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.21V
Input Capacitance	920pF
Turn On Time	100 ns
Test Condition	480V, 16A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 16A
Turn Off Time-Nom (toff)	370 ns
Gate Charge	67nC
Current - Collector Pulsed (Icm)	58A
Td (on/off) @ 25°C	60ns/160ns
Switching Energy	600μJ (on), 580μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	120ns
Height	20.3mm
Length	15.875mm
Width	5.3mm
Radiation Hardening	No