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IRG4IBC20WPBF

IRG4IBC20WPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-IRG4IBC20WPBF
Package: TO-220-3 Full Pack
Datasheet: PDF
Stock: 898
Description: IRG4IBC20WPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	34W
Terminal Position	SINGLE
Current Rating	11.8A
Number of Elements	1
Element Configuration	Dual
Power Dissipation	34W
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	14ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.6V
Max Collector Current	12A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.16V
Turn On Time	36 ns
Test Condition	480V, 6.5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 6.5A
Turn Off Time-Nom (toff)	300 ns
Gate Charge	26nC
Current - Collector Pulsed (Icm)	52A
Td (on/off) @ 25°C	22ns/110ns
Switching Energy	60μJ (on), 80μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	96ns
Height	14.224mm
Length	10.7442mm
Width	4.826mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free