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IRG4BC30FD-STRR

IRG4BC30FD-STRR datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-IRG4BC30FD-STRR
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet: -
Stock: 991
Description: IRG4BC30FD-STRR datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Insulated Gate BIP Transistors
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	100W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	42ns
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	31A
Power Dissipation-Max (Abs)	100W
Turn On Time	69 ns
Test Condition	480V, 17A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 17A
Turn Off Time-Nom (toff)	620 ns
Gate Charge	51nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	42ns/230ns
Switching Energy	630μJ (on), 1.39mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	230ns
RoHS Status	Non-RoHS Compliant