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IRG4BC10SD-SPBF

IRG4BC10SD-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-IRG4BC10SD-SPBF
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet: PDF
Stock: 788
Description: IRG4BC10SD-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	LOW CONDUCTION LOSS
Voltage - Rated DC	600V
Max Power Dissipation	38W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	14A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	38W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	36ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.8V
Max Collector Current	14A
Reverse Recovery Time	28 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.58V
Turn On Time	106 ns
Test Condition	480V, 8A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 8A
Turn Off Time-Nom (toff)	1780 ns
Gate Charge	15nC
Current - Collector Pulsed (Icm)	18A
Td (on/off) @ 25°C	76ns/815ns
Switching Energy	310μJ (on), 3.28mJ (off)
Height	4.699mm
Length	10.668mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free