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IRFI4019H-117P

MOSFET 2N-CH 150V 8.7A TO-220FP


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFI4019H-117P
  • Package: TO-220-5 Full Pack
  • Datasheet: PDF
  • Stock: 386
  • Description: MOSFET 2N-CH 150V 8.7A TO-220FP (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-5 Full Pack
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 95MOhm
Subcategory FET General Purpose Power
Max Power Dissipation 18W
Terminal Position SINGLE
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 18W
Turn On Delay Time 7 ns
FET Type 2 N-Channel (Dual)
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 95m Ω @ 5.2A, 10V
Vgs(th) (Max) @ Id 4.9V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 810pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 6.6ns
Drain to Source Voltage (Vdss) 150V
Fall Time (Typ) 3.1 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 8.7A
Threshold Voltage 4.9V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 34A
Avalanche Energy Rating (Eas) 77 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 86 ns
FET Feature Standard
Nominal Vgs 4.9 V
Height 9.02mm
Length 10.6172mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet
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