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IRF7342TRPBF

MOSFET 2P-CH 55V 3.4A 8-SOIC

Manufacturer: Infineon Technologies
Origchip NO: 376-IRF7342TRPBF
Package: 8-SOIC (0.154, 3.90mm Width)
Datasheet: PDF
Stock: 845
Description: MOSFET 2P-CH 55V 3.4A 8-SOIC (Kg)

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Details

Tags

Parameters
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1999
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	105mOhm
Additional Feature	ULTRA LOW RESISTANCE
Voltage - Rated DC	-55V
Max Power Dissipation	2W
Terminal Form	GULL WING
Current Rating	-3.4A
Base Part Number	IRF7342PBF
Number of Elements	2
Row Spacing	6.3 mm
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	14 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	105m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	690pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.4A
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	55V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	43 ns
Continuous Drain Current (ID)	-3.4A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-55V
Avalanche Energy Rating (Eas)	114 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
Recovery Time	80 ns
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Nominal Vgs	-1 V
Height	1.75mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free