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IRF7105TRPBF

IRF7105TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-IRF7105TRPBF
Package: 8-SOIC (0.154, 3.90mm Width)
Datasheet: PDF
Stock: 544
Description: IRF7105TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	100mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
Max Power Dissipation	2W
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	3.5A
Base Part Number	IRF7105PBF
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	7 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 1A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	330pF @ 15V
Current - Continuous Drain (Id) @ 25°C	3.5A 2.3A
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Rise Time	13ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	37 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	3.5A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	14A
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Standard
Nominal Vgs	3 V
Height	1.75mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free