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IPT004N03LATMA1

IPT004N03LATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-IPT004N03LATMA1
Package: 8-PowerSFN
Datasheet: PDF
Stock: 452
Description: IPT004N03LATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerSFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	FLAT
Reach Compliance Code	not_compliant
JESD-30 Code	R-PSSO-F2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.8W Ta 300W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	0.4m Ω @ 150A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	24000pF @ 15V
Current - Continuous Drain (Id) @ 25°C	300A Tc
Gate Charge (Qg) (Max) @ Vgs	163nC @ 4.5V
Rise Time	17ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	37 ns
Turn-Off Delay Time	149 ns
Continuous Drain Current (ID)	300A
Threshold Voltage	2.2V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	30V
Drain-source On Resistance-Max	0.0005Ohm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead