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IPD80R2K8CEATMA1

N-Channel 800 V 2.8 O 12 nC CoolMOS CE Power Transistor - DPAK

Manufacturer: Infineon Technologies
Origchip NO: 376-IPD80R2K8CEATMA1
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet: PDF
Stock: 841
Description: N-Channel 800 V 2.8 O 12 nC CoolMOS CE Power Transistor - DPAK (Kg)

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Details

Tags

Parameters
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Supplier Device Package	PG-TO252-3
Weight	3.949996g
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	CoolMOS™ CE
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	42W Tc
Element Configuration	Single
Turn On Delay Time	25 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.8Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id	3.9V @ 120μA
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 100V
Current - Continuous Drain (Id) @ 25°C	1.9A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	18 ns
Turn-Off Delay Time	72 ns
Continuous Drain Current (ID)	1.9A
Gate to Source Voltage (Vgs)	30V
Max Dual Supply Voltage	800V
Input Capacitance	290pF
Drain to Source Resistance	2.4Ohm
Rds On Max	2.8 Ω
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free