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IPD60R650CEATMA1

MOSFET N-Ch 600V 7A DPAK-2

Manufacturer: Infineon Technologies
Origchip NO: 376-IPD60R650CEATMA1
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet: PDF
Stock: 720
Description: MOSFET N-Ch 600V 7A DPAK-2 (Kg)

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Shipping Method

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Vgs (Max)	±20V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	58 ns
Continuous Drain Current (ID)	7A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.65Ohm
DS Breakdown Voltage-Min	600V
RoHS Status	RoHS Compliant
Lead Free	Lead Free
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	3.949996g
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	CoolMOS™ CE
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	63W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	650m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds	440pF @ 100V
Current - Continuous Drain (Id) @ 25°C	7A Tc
Gate Charge (Qg) (Max) @ Vgs	20.5nC @ 10V
Rise Time	8ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V