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IPD60R520C6ATMA1

MOSFET N-CH 600V 8.1A TO252

Manufacturer: Infineon Technologies
Origchip NO: 376-IPD60R520C6ATMA1
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet: PDF
Stock: 562
Description: MOSFET N-CH 600V 8.1A TO252 (Kg)

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Details

Tags

Parameters
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	CoolMOS™ C6
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Reach Compliance Code	not_compliant
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	66W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	520m Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id	3.5V @ 230μA
Input Capacitance (Ciss) (Max) @ Vds	512pF @ 100V
Current - Continuous Drain (Id) @ 25°C	8.1A Tc
Gate Charge (Qg) (Max) @ Vgs	23.4nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	8.1A
Drain-source On Resistance-Max	0.52Ohm
Pulsed Drain Current-Max (IDM)	22A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	153 mJ
RoHS Status	RoHS Compliant