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IPD60R1K4C6ATMA1

Trans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) TO-252

Manufacturer: Infineon Technologies
Origchip NO: 376-IPD60R1K4C6ATMA1
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet: PDF
Stock: 261
Description: Trans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) TO-252 (Kg)

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Details

Tags

Parameters
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	CoolMOS™ C6
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Reach Compliance Code	not_compliant
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	28.4W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.4 Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 90μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	200pF @ 100V
Current - Continuous Drain (Id) @ 25°C	3.2A Tc
Gate Charge (Qg) (Max) @ Vgs	9.4nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	3.2A
Max Dual Supply Voltage	600V
Pulsed Drain Current-Max (IDM)	8A
Avalanche Energy Rating (Eas)	26 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63