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IPD50P04P413ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi

  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPD50P04P413ATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 595
  • Description: IPD50P04P413ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 12.6m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 85μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3670pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Rise Time 10ns
Factory Lead Time 26 Weeks
Drain to Source Voltage (Vdss) 40V
Mount Surface Mount
Drive Voltage (Max Rds On,Min Rds On) 10V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Fall Time (Typ) 28 ns
Transistor Element Material SILICON
Turn-Off Delay Time 22 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
Continuous Drain Current (ID) 50A
JESD-609 Code e3
Gate to Source Voltage (Vgs) 20V
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Dual Supply Voltage -40V
Number of Terminations 2
Drain-source On Resistance-Max 0.0126Ohm
Pulsed Drain Current-Max (IDM) 20A
Terminal Finish Tin (Sn)
Avalanche Energy Rating (Eas) 18 mJ
Technology MOSFET (Metal Oxide)
RoHS Status ROHS3 Compliant
Terminal Position SINGLE
Lead Free Contains Lead
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 58W Tc
See Relate Datesheet
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