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FQD5N60CTM

MOSFET N-CH 600V 2.8A DPAK

Manufacturer: ON Semiconductor
Origchip NO: 598-FQD5N60CTM
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet: PDF
Stock: 508
Description: MOSFET N-CH 600V 2.8A DPAK (Kg)

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Details

Tags

Parameters
Factory Lead Time	7 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	2.5Ohm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	5A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	2.5W Ta 49W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.5 Ω @ 1.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	670pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.8A Tc
Gate Charge (Qg) (Max) @ Vgs	19nC @ 10V
Rise Time	42ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	46 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	2.8A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free