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FGB3236-F085

FGB3236-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi

Manufacturer: ON Semiconductor
Origchip NO: 598-FGB3236-F085
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet: PDF
Stock: 981
Description: FGB3236-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	9 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	Automotive, AEC-Q101, EcoSPARK®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	187W
Terminal Form	GULL WING
Base Part Number	FGB3236
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Rise Time-Max	7000ns
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Logic
Power - Max	187W
Clamping Voltage	360V
Transistor Application	AUTOMOTIVE IGNITION
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.32V
Max Collector Current	44A
Collector Emitter Breakdown Voltage	360V
Max Breakdown Voltage	360V
Turn On Time	2350 ns
Test Condition	300V, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic	1.4V @ 4V, 6A
Turn Off Time-Nom (toff)	7040 ns
Gate Charge	20nC
Td (on/off) @ 25°C	-/5.4μs
Gate-Emitter Voltage-Max	12V
Gate-Emitter Thr Voltage-Max	2.2V
Fall Time-Max (tf)	15000ns
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free