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FDMQ8205A

FDMQ8205A datasheet pdf and PMIC - OR Controllers, Ideal Diodes product details from ON Semiconductor stock available at XINJIADA

Manufacturer: ON Semiconductor
Origchip NO: 598-FDMQ8205A
Package: 12-WDFN Exposed Pad
Datasheet: PDF
Stock: 342
Description: FDMQ8205A datasheet pdf and PMIC - OR Controllers, Ideal Diodes product details from ON Semiconductor stock available at XINJIADA(Kg)

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Details

Tags

Parameters
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	12-WDFN Exposed Pad
Weight	210mg
Transistor Element Material	SILICON
Operating Temperature	-40°C~85°C
Packaging	Tape & Reel (TR)
Published	2017
Series	GreenBridge™
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	12
Type	Bridge Rectifier
Terminal Finish	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Applications	Power Over Ethernet (PoE)
Max Power Dissipation	780mW
Voltage - Supply	57V Max
Terminal Position	DUAL
Terminal Form	NO LEAD
Number of Outputs	2
Output Voltage	57V
Number of Elements	4
Configuration	COMPLEX
Operating Mode	ENHANCEMENT MODE
Current - Supply	400μA
FET Type	N and P-Channel
Transistor Application	SWITCHING
Ratio - Input:Output	Bridge (2)
Drain Current-Max (Abs) (ID)	1.7A
Drain-source On Resistance-Max	0.051Ohm
Internal Switch(s)	Yes
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	125°C
Ambient Temperature Range High	85°C
Height	800μm
RoHS Status	ROHS3 Compliant

FDMQ8205A Description

FDMQ8205A is GreenBridge^TM2 series of quad MOSFETs for a bridge application so that the input will be insensitive to the polarity of a power source coupled to the device. Many known bridge rectifier circuits can be configured using typical diodes. The conventional diode bridge has relatively high power loss that is undesirable in many applications. Especially, Power over Ethernet (PoE) Power Device (PD) application requires high-efficiency bridges because it should be operated with the limited power delivered from Power Source Equipment (PSE) which is classified by IEEE802.3at. FDMQ8205A is configured with low r_DS(on) dual P-ch MOSFETs and N-ch MOSFETs so that it can reduce the power loss caused by the voltage drop, compared to the conventional diode bridge. FDMQ8205A enables the application to maximize the available power and voltage and to eliminate the thermal design problems in PoE PD applications.

FDMQ8205A GreenBridge^TM2 is compatible with IEEE802.3at PoE standard by not compromising detection and classification requirement as well as small backfeed voltage.