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FDG6317NZ

FDG6317NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi

Manufacturer: ON Semiconductor
Origchip NO: 598-FDG6317NZ
Package: 6-TSSOP, SC-88, SOT-363
Datasheet: -
Stock: 287
Description: FDG6317NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	28mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	560MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Max Power Dissipation	300mW
Terminal Form	GULL WING
Current Rating	700mA
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Turn On Delay Time	5.5 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	400m Ω @ 700mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	66.5pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	1.1nC @ 4.5V
Rise Time	7ns
Fall Time (Typ)	2.5 ns
Turn-Off Delay Time	7.5 ns
Continuous Drain Current (ID)	700mA
Threshold Voltage	1.2V
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	0.7A
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1.1mm
Length	2mm
Width	1.25mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free