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FDD10N20LZTM

FDD10N20LZTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi

Manufacturer: ON Semiconductor
Origchip NO: 598-FDD10N20LZTM
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet: PDF
Stock: 184
Description: FDD10N20LZTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Length	6.73mm
Number of Terminations	2
Width	6.22mm
ECCN Code	EAR99
Radiation Hardening	No
Terminal Finish	Tin (Sn)
RoHS Status	ROHS3 Compliant
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	83W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	56W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Factory Lead Time	11 Weeks
Transistor Application	SWITCHING
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Rds On (Max) @ Id, Vgs	360m Ω @ 3.8A, 10V
Mount	Surface Mount
Mounting Type	Surface Mount
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	585pF @ 25V
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Current - Continuous Drain (Id) @ 25°C	7.6A Tc
Weight	260.37mg
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Transistor Element Material	SILICON
Rise Time	15ns
Operating Temperature	-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Packaging	Tape & Reel (TR)
Fall Time (Typ)	25 ns
Series	UniFET™
Turn-Off Delay Time	55 ns
JESD-609 Code	e3
Continuous Drain Current (ID)	7.6A
Pbfree Code	yes
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Part Status	Active
Drain to Source Breakdown Voltage	200V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Height	2.39mm