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FDC6305N

FDC6305N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi

Manufacturer: ON Semiconductor
Origchip NO: 598-FDC6305N
Package: SOT-23-6 Thin, TSOT-23-6
Datasheet: -
Stock: 114
Description: FDC6305N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	36mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1999
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	80mOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Max Power Dissipation	960mW
Terminal Form	GULL WING
Current Rating	2.7A
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	900mW
Turn On Delay Time	5 ns
Power - Max	700mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 2.7A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	310pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	5nC @ 4.5V
Rise Time	8.5ns
Fall Time (Typ)	8.5 ns
Turn-Off Delay Time	11 ns
Continuous Drain Current (ID)	2.7A
Threshold Voltage	900mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
Dual Supply Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Standard
Height	1.1mm
Length	3mm
Width	1.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free