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DN3135K1-G

Trans MOSFET N-CH Si 350V 0.072A 3-Pin SOT-23 T/R

Manufacturer: Microchip Technology
Origchip NO: 536-DN3135K1-G
Package: TO-236-3, SC-59, SOT-23-3
Datasheet: PDF
Stock: 466
Description: Trans MOSFET N-CH Si 350V 0.072A 3-Pin SOT-23 T/R (Kg)

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Details

Tags

Parameters
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Qualification Status	Not Qualified
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	360mW Ta
Element Configuration	Single
Power Dissipation	360mW
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35 Ω @ 150mA, 0V
Input Capacitance (Ciss) (Max) @ Vds	120pF @ 25V
Current - Continuous Drain (Id) @ 25°C	72mA Tj
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	0V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	72mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.072A
Drain to Source Breakdown Voltage	350V
FET Feature	Depletion Mode
Height	950μm
Length	2.9mm
Width	1.3mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free