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DMS935E10R

Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 1.6x1.6mm


  • Manufacturer: Panasonic Electronic Components
  • Origchip NO: 590-DMS935E10R
  • Package: SOT-563, SOT-666
  • Datasheet: -
  • Stock: 576
  • Description: Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 1.6x1.6mm (Kg)

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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Operating Temperature 150°C
Applications CCD Output Circuits
Voltage - Rated 20V NPN 40V N-Channel
Subcategory Other Transistors
Current Rating (Amps) 50mA NPN 10mA N-Channel
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Current Rating 10mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F6
Number of Elements 1
Polarity NPN
Element Configuration Single
Gain Bandwidth Product 1.3 GHz
Transistor Type NPN, N-Channel
Collector Emitter Voltage (VCEO) 20V
Transition Frequency 1300MHz
Power Dissipation-Max (Abs) 0.125W
hFE Min 100
Collector Current-Max (IC) 0.05A
DC Current Gain-Min (hFE) 100
RoHS Status RoHS Compliant
See Relate Datesheet
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