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DMP6023LFG-7

MOSFET P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF

Manufacturer: Diodes Incorporated
Origchip NO: 233-DMP6023LFG-7
Package: 8-PowerVDFN
Datasheet: PDF
Stock: 790
Description: MOSFET P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF (Kg)

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Details

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Parameters
Number of Pins	8
Weight	72.007789mg
Transistor Element Material	SILICON
Manufacturer Package Identifier	POWERDI3333-8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Capacitance	2.569nF
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1W
Case Connection	DRAIN
Turn On Delay Time	6 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2569pF @ 30V
Current - Continuous Drain (Id) @ 25°C	7.7A Ta
Gate Charge (Qg) (Max) @ Vgs	53.1nC @ 10V
Rise Time	7.1ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	62 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	-7.7A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.025Ohm
Drain to Source Breakdown Voltage	-60V
Max Junction Temperature (Tj)	150°C
Height	850μm
Length	3.3mm
Width	3.3mm
RoHS Status	ROHS3 Compliant
Factory Lead Time	23 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN