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DMN3404L-7

MOSFET N-CH 30V 5.8A SOT-23


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN3404L-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 360
  • Description: MOSFET N-CH 30V 5.8A SOT-23 (Kg)

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Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 28mOhm
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 720mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.4W
Turn On Delay Time 3.41 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 5.8A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 386pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.8A Ta
Gate Charge (Qg) (Max) @ Vgs 9.2nC @ 10V
Rise Time 6.18ns
Drive Voltage (Max Rds On,Min Rds On) 3V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.18 ns
Factory Lead Time 15 Weeks
Turn-Off Delay Time 13.92 ns
Contact Plating Tin
Continuous Drain Current (ID) 4.2A
Threshold Voltage 1.5V
Mount Surface Mount
Gate to Source Voltage (Vgs) 20V
Mounting Type Surface Mount
Drain Current-Max (Abs) (ID) 5.8A
Package / Case TO-236-3, SC-59, SOT-23-3
Drain to Source Breakdown Voltage 30V
Number of Pins 3
Weight 7.994566mg
Max Junction Temperature (Tj) 150°C
Transistor Element Material SILICON
Nominal Vgs 1.5 V
Operating Temperature -55°C~150°C TJ
Height 1.1mm
Packaging Tape & Reel (TR)
Length 2.9mm
Published 2013
JESD-609 Code e3
Width 1.3mm
REACH SVHC No SVHC
Pbfree Code yes
RoHS Status ROHS3 Compliant
Part Status Active
Lead Free Lead Free
See Relate Datesheet
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