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DMN3065LW-7

MOSFET N-CH 30V 4A SOT-323

Manufacturer: Diodes Incorporated
Origchip NO: 233-DMN3065LW-7
Package: SC-70, SOT-323
Datasheet: PDF
Stock: 889
Description: MOSFET N-CH 30V 4A SOT-323 (Kg)

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Details

Tags

Parameters
Base Part Number	DMN3065
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	770mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	1.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	52m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	465pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4A Ta
Gate Charge (Qg) (Max) @ Vgs	11.7nC @ 10V
Rise Time	1.6ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	2 ns
Turn-Off Delay Time	10.3 ns
Continuous Drain Current (ID)	4A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	4A
Drain-source On Resistance-Max	0.052Ohm
DS Breakdown Voltage-Min	30V
RoHS Status	ROHS3 Compliant
Factory Lead Time	22 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Weight	6.010099mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING