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DMN26D0UFB4-7

MOSFET N-CH 20V 230MA DFN

Manufacturer: Diodes Incorporated
Origchip NO: 233-DMN26D0UFB4-7
Package: 3-XFDFN
Datasheet: PDF
Stock: 616
Description: MOSFET N-CH 20V 230MA DFN (Kg)

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Details

Tags

Parameters
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±10V
Fall Time (Typ)	15.2 ns
Turn-Off Delay Time	13.4 ns
Continuous Drain Current (ID)	240mA
Gate to Source Voltage (Vgs)	10V
Drain Current-Max (Abs) (ID)	0.24A
DS Breakdown Voltage-Min	20V
Height	350μm
Length	1.05mm
Width	650μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-XFDFN
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Digi-Reel®
Published	2017
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	10Ohm
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature	ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	350mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	350mW
Case Connection	DRAIN
Turn On Delay Time	3.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	14.1pF @ 15V
Current - Continuous Drain (Id) @ 25°C	230mA Ta
Rise Time	7.9ns