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DMN1150UFB-7B

MOSFET N-CH 12V 1.41A 3DFN

Manufacturer: Diodes Incorporated
Origchip NO: 233-DMN1150UFB-7B
Package: 3-UFDFN
Datasheet: PDF
Stock: 187
Description: MOSFET N-CH 12V 1.41A 3DFN (Kg)

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Details

Tags

Parameters
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-UFDFN
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2013
JESD-609 Code	e4
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	500mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	4.1 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	106pF @ 10V
Current - Continuous Drain (Id) @ 25°C	1.41A Ta
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 4.5V
Rise Time	34.5ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±6V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	57 ns
Continuous Drain Current (ID)	1.41A
Gate to Source Voltage (Vgs)	6V
Drain to Source Breakdown Voltage	12V
Height	480μm
Length	1.08mm
Width	675μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free