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DMB2227A-7

Bipolar Transistors - BJT 300mW +/-600mA

Manufacturer: Diodes Incorporated
Origchip NO: 233-DMB2227A-7
Package: SOT-23-6
Datasheet: PDF
Stock: 109
Description: Bipolar Transistors - BJT 300mW +/-600mA (Kg)

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Details

Tags

Parameters
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Number of Pins	6
Weight	29.993795mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	300mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Frequency	300MHz
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	2
Polarity	NPN, PNP
Element Configuration	Dual
Power Dissipation	300mW
Transistor Application	SWITCHING
Gain Bandwidth Product	300MHz
Transistor Type	NPN, PNP
Collector Emitter Voltage (VCEO)	1V
Max Collector Current	600mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA 10V
Current - Collector Cutoff (Max)	10nA ICBO
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage	60V
Voltage - Collector Emitter Breakdown (Max)	40V 60V
Transition Frequency	300MHz
Max Breakdown Voltage	60V
Frequency - Transition	300MHz 200MHz
Collector Base Voltage (VCBO)	75V
Emitter Base Voltage (VEBO)	5V
hFE Min	35
Height	1.1mm
Length	3mm
Width	1.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant